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| 2008. 5. 13 1/2 semiconductor technical data MBRF10200CT schottky barrier type diode revision no : 1 switching type power supply application. converter & chopper application. features average output rectified current : i o =10a. repetitive peak reverse voltage : v rrm =200v. fast reverse recovery time : t rr =35ns. maximum rating (ta=25 ) to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q 1. anode 2. cathode 3. anode r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ characteristic symbol rating unit repetitive peak reverse voltage v rrm 200 v average output rectified current (tc=118 ) (note) i o 10 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 100 a junction temperature t j -40 150 storage temperature range t stg -55 150 note : average forward current of centertap full wave connection. 3 1 2 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =5a - - 0.95 v repetitive peak reverse current (note) i rrm v rrm =rated - - 150 reverse recovery time (note) t rr i f =1.0a, di/dt=-30a/ - - 35 ns thermal resistance (note) r th(j-c) juction to case - - 3 /w note : a value of one cell
2008. 5. 13 2/2 MBRF10200CT revision no : 1 average forward current i f(av) (a) average forward current i f(av) (a) p f(av) (w) average forward current i f(av) (a) p f(av) - i f(av) average forward power dissipation reverse current i r ( a) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) forward current i f (a) i f - t c i f - t a case temperature tc ( c) ambient temperature t a ( c) 0 0 0 0 0 0 0.1 0.2 0.4 0.6 0.8 1 1 10 50 100 150 0.1 1 10 100 110 120 130 140 150 4 2 6 dc 40 80 120 160 2 8 10 4 6 12 rated voltage applied ja ja r =16 c/w r =60 c/w (no heat sink) dc dc 2468 2 8 dc 4 6 8 10 12 10 12 10 200 rated voltage r = 3 c/w jc applied j t =25 c t j =25 c |
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